| 摘要 |
<p>PURPOSE: A semiconductor device and a method for manufacturing the same are provided to form a electric charge on a gate insulating layer by implanting conductive impurity on the gate insulating layer. CONSTITUTION: A gate insulating layer(520) is formed on the top of a semiconductor substrate(100). A photoresist pattern(600) is formed a region having no the gate insulating layer. An impurity ion is doped in the lower region of the gate insulating layer. A material for gate is patterned on the gate insulating layer and form a gate. A source / drain region is formed on the semiconductor substrate.</p> |
