发明名称 NAND-STRUCTURED SERIES VARIABLE-RESISTANCE MATERIAL MEMORIES, PROCESSES OF FORMING SAME, AND METHODS OF USING SAME
摘要 <p>A variable-resistance material memory array includes a series of variable-resistance material memory cells. The series of variable-resistance material memory cells is in parallel with a corresponding series of control gates. A select gate is also in series with the variable-resistance material memory cells. Writing/reading/erasing to a given variable-resistance material memory cell includes turning off the corresponding control gate, while turning on all other control gates. Devices include the variable-resistance material memory array.</p>
申请公布号 KR20100061558(A) 申请公布日期 2010.06.07
申请号 KR20107008510 申请日期 2008.09.19
申请人 MICRON TECHNOLOGY, INC. 发明人 LIU JUN
分类号 H01L27/115;H01L21/8247 主分类号 H01L27/115
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