RESISTANCE VARIABLE MEMORY DEVICE AND METHOD FOR FORMING THE SAME

摘要

PURPOSE: A resistance variable memory device and a method for forming the same are provided to reduce a rest current by heating a phase change material layer effectively. CONSTITUTION: A substrate including a conductive region is provided. A first insulating layer having an opening on the substrate is formed. The conductive region(120) is formed under the opening. A reserved bottom electrode is formed on the conductive region. The bottom electrode is formed by oxidizing the top of the reserved bottom electrode(176). The phase change material layer(195) is formed on the bottom electrode.