| 摘要 |
PURPOSE: A method for planarization and a manufacturing an insulation layer of a semiconductor device are provided to reduce a CMP(Chemical Mechanical Polishing) scratch by executing a first and second polishing. CONSTITUTION: An insulating material is formed in a trench formed in a semiconductor substrate(100). A CMP process for planarizing the insulating material is performed. The CMP process comprises a first polishing and a second polishing. The first polishing is executed by using slurry and an activator. The second polishing is executed by using ionized water. The first planarization process and the second planarization process are performed one time respectively.
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