| 摘要 |
PURPOSE: An organo metallic precursor compound for depositing metal thin film or ceramic thin film is provided to ensure high vapor pressure and to manufacture semiconductor. CONSTITUTION: An organo metallic precursor compound for depositing metal thin film or ceramic thin film is denoted by chemical formula 1. In chemical formula 1, M is vanadium(V), niobium(Nb), or tantalum (Ta). The organo metallic precursor compound is denoted by chemical formula 2. In chemical formula 2, M' is vanadium(V), niobium(Nb), or tantalum (Ta). A method for preparing the organo metallic precursor compound comprises: a step of adding cyclopentadiene compound to imidotrisaminometal compound in non-polar solvent to reflux; and a step of decompressing refluxed solution. The non-polar solvent is benzene, hexane, or toluene.
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