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发明名称
NITRIDE SEMICONDUCTOR DEVICE HAVING DOUBLE HETERO-JUNCTION STRUCTURE ACTIVE LAYER
摘要
申请公布号
KR100961107(B1)
申请公布日期
2010.06.07
申请号
KR20070117677
申请日期
2007.11.19
申请人
发明人
分类号
H01L33/04
主分类号
H01L33/04
代理机构
代理人
主权项
地址
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