发明名称 APPARATUS AND METHOD FOR WASHING POLYCRYSTALLINE SILICON
摘要 PURPOSE: A poly-crystal silicon cleaning device and a cleaning method are provided to clean the poly-crystal silicon by successively dipping the poly-crystal silicon form a first acid bath to a final acid bath. CONSTITUTION: A plurality of acid bathes(2~6) fills an acid. A poly-crystal silicon(S) is cleaned by successively dipping the poly-crystal silicon from a first acid bath to a final acid bath. A solution temperature of later acid bath is established with same solution temperature of former acid bath or low. The final acid bath is established as the lower temperature than the first acid bath. A temperature controller(18) regularly maintains the solution temperature of the acid bath. A liquid transferring means(11) transfers the acid inside of the later acid bath into inside of the former acid bath.
申请公布号 KR20100061379(A) 申请公布日期 2010.06.07
申请号 KR20090115260 申请日期 2009.11.26
申请人 MITSUBISHI MATERIALS CORP. 发明人 SAKAI KAZUHIRO;ATSUMI TETSUYA;MIYATA YUKIYASU
分类号 C30B33/00;B08B3/04 主分类号 C30B33/00
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