PHOTOSENSOR AND DISPLAY DEVICE

摘要

PURPOSE: A photosensor and a display device are provided to convert the intensity distribution of the light into the electrical signal with good reproductivity by forming a thin film transistor using an oxide semiconductor on a substrate of large size. CONSTITUTION: The photoelectric conversion device comprises the photoelectric transformation layer. The amplifier circuit comprises thin film transistors(152, 153) using the oxide semiconductor. The semiconductor layer(250a) comprises the impurity element having the conductive type. The second semiconductor layer(250b) is close to the semiconductor layer. The third semiconductor layer(250c) is close to the second semiconductor layer. The third semiconductor layer comprises the impurity element having the conductive type and opposite of the semiconductor layer conductive type.