SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

PURPOSE: A semiconductor device and a manufacturing method thereof are provided to easily form as a low-temperature process by forming a first oxide channel layer and a second oxide channel layer into an oxide. CONSTITUTION: A first thin film transistor includes a first source(S10), a first drain, a first channel layer, and a first gate. A second thin film transistor includes a second source(S20), a second drain, a second channel layer, and a second gate. One is a p-type oxide layer among the first and the second channel layer. The first and the second thin film transistor is a bottom gate(BG10, BG20) structure or a top gate structure. One is a dual gate including more other gates among the first and the second thin film transistor at least.