发明名称 MANUFACTURING METHOD OF WAFER
摘要 PURPOSE: A wafer manufacturing method according to the present invention is provided to gain the wafer of a high quality by eliminating defect which exists on an initial wafer. CONSTITUTION: A wafer is washed(S100). The safer is planarized(S200). A thin film layer is formed on the wafer surface(S300). The wafer surface including the thin film layer is texture-processed(S400). The wafer surface is processed with a hydrogen plasma(S500).
申请公布号 KR20100061122(A) 申请公布日期 2010.06.07
申请号 KR20080120016 申请日期 2008.11.28
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 PARK, MIN;OH, MIN SEOK;SHIN, MYUNG HUN;LEE, BYOUNG KYU;NAM, YUK HYUN;JUNG, SEUNG JAE
分类号 H01L21/302;H01L31/04 主分类号 H01L21/302
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