PURPOSE: A wafer manufacturing method according to the present invention is provided to gain the wafer of a high quality by eliminating defect which exists on an initial wafer. CONSTITUTION: A wafer is washed(S100). The safer is planarized(S200). A thin film layer is formed on the wafer surface(S300). The wafer surface including the thin film layer is texture-processed(S400). The wafer surface is processed with a hydrogen plasma(S500).
申请公布号
KR20100061122(A)
申请公布日期
2010.06.07
申请号
KR20080120016
申请日期
2008.11.28
申请人
SAMSUNG ELECTRONICS CO., LTD.
发明人
PARK, MIN;OH, MIN SEOK;SHIN, MYUNG HUN;LEE, BYOUNG KYU;NAM, YUK HYUN;JUNG, SEUNG JAE