SEMICONDUCTOR DEVICES INCLUDING A DIELECTRIC

摘要

PURPOSE: A semiconductor device including a dielectric layer is provided to offer a doped harfnium dioxide layer having a high dielectric constant by including a doping atom and a tetragonal unit lattices having the ion size bigger than the ion size of a hafnium atom. CONSTITUTION: A doped hafnium oxide layer(110) is located on a substrate(100). A bottom electrode(105) is located between the doped hafnium dioxide layer and a substrate. An upper electrode(120) is located on the doped hafnium dioxide layer. The ion size of the doping atom is bigger than the ion size of the hafnium atom. The doped hafnium dioxide layer comprises the tetragonal unit lattices.