| 摘要 |
PURPOSE: A MIM(Metal-insulator-metal) capacitor manufacturing method for a semiconductor device is provided to reduce the area of a chip and manufacture a reliable semiconductor by designing a MIM capacitor having an area corresponding to voltage generated for actual use. CONSTITUTION: A diffusion barrier(120), a bottom conductive layer(130), and a dielectric layer(140) are formed on the semiconductor substrate, sequentially. The area of the dielectric layer applied with the high voltage is applied is patterned as a first photoresist(150). The dielectric layer for the low voltage is evaporated on the bottom conductive layer.
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