发明名称 NONVOLATILE MEMORY DEVICE
摘要 PURPOSE: A nonvolatile memory device is provided to reduce a memory operation time by controlling a preparation sequence and a stress sequence of an operating sequence in parallel. CONSTITUTION: A command generator(30) generates commands for executing a memory operation. A command buffer(20) stores the generated commands temporally. A preparation state unit executes a preparation sequence. The stress state unit executes the stress sequence. A logic unit controls an inner operation sequence. The internal operation controller(10) controls the sequence of the internal operation to execute the commands which are stored in the command buffer.
申请公布号 KR20100059666(A) 申请公布日期 2010.06.04
申请号 KR20090068975 申请日期 2009.07.28
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 FUJIWARA DAISUKE
分类号 G11C16/00;G11C16/06;G11C16/32 主分类号 G11C16/00
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