| 摘要 |
<p>PURPOSE: An exposure mask and a pattern forming method using the same are provided to improve the process margin by using an exposure mask including an assist feature. CONSTITUTION: A first line pattern(210a) is formed on the domain A on a transparent substrate(200). A second line pattern(210b) is formed on the domain B on the transparent substrate. The first pattern and the second pattern are line pattern. The second patterns have the pitch smaller than the pitch of the first patterns. An assist feature(210c) is arranged between the first patterns. The line width of the assist feature is formed to be smaller than the line width of the first line pattern.</p> |
