MANUFACTURING METHOD OF PHASE CHANGE RANDOM ACCESS MEMORY DEVICE

摘要

PURPOSE: A method for manufacturing a phase change memory device is provided to prevent the deterioration of a device property by embedding a trench or a contact region in a limited structure without a void. CONSTITUTION: A switching element is formed on a semiconductor substrate(100). Inter-layer insulating layers(110, 125) are formed on the upper side of the switching element. A via hole which exposes a pre-set region of the semiconductor substrate is formed. A phase change layer(140a) is formed in the bottom side of the via hole. The phase change layer is re-deposited on the sidewall of the via hole. The inside of the via hole is filled with the phase change layer.