SEMICONDUCTOR MEMORY DEVICE WITH ONLY BITLINE ON MEMORY CELL

摘要

PURPOSE: A semiconductor memory device with only bit line on memory cell is provided to only require one N-type sensing amplifier for sensing a bit line by accepting data stored in a memory cell only through a bit line. CONSTITUTION: A first memory cell is formed within a first memory cell array block. A second memory cell is formed within a second memory cell array block. A bit line(BL) is connected to a first memory cell(MC1) through a first separation transistor. The bit line is connected to a second memory cell(MC2) through a second isolating transistor.