MANUFACTURING METHOD OF POLYSILICON-INSULATOR-POLYSILICON CAPACITOR FOR SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a polysilicon-insulator-polysilicon(PIP) capacitor is provided to increase the contact area of an upper and a lower polysilicon layers in order to obtain the desire capacitance of the capacitor by forming the lower polysilicon layer in a pyramid shape. CONSTITUTION: An insulating layer(20) is formed on a semiconductor substrate(10). A polysilicon layer(300) which functions as a lower conductive layer is deposited on the insulating layer. A stepped layer is formed on the polysilicon layer by performing a partial-etching operation. An etching process is performed in order to form a photo resist pattern including the stepped layer. A dielectric layer(400) is deposited. The polysilicon layer which functions as an upper conductive layer(500) is deposited.