| 摘要 |
<p>PURPOSE: An antireflective composition and a method for forming a pattern of a semiconductor device using the same are provided to form a pattern of an antireflective film when a photoresist pattern is formed and to have no etching process for eliminating the antireflective film. CONSTITUTION: An antireflective composition includes a polymer including a repeat unit of a chemical formula 1, a polymer for optical absorption, an acid generator, a cross-linking agent, and an organic solvent. In the chemical formula 1, R_1, R_2, and R_3 are hydrogen or methyl group and R_4 is alkylene of C1-C5. The polymer for the optical absorption includes polyhydroxystyrene. The acid generator is selected from a group comprising a photoacid generator and thermal acid generator. The cross-linking agent includes melamine.</p> |
