| 摘要 |
PURPOSE: A flash memory device and a manufacturing method thereof are provided to reduce the interference between the memory cells by connecting a shield to a common source line and grounding it. CONSTITUTION: A plurality of cell strings(10) are formed on a semiconductor substrate. A drain selection transistor, a plurality of memory cells, and a source selection transistor are serially connected to, respectively. A shield(120) is formed in the lower part of the semiconductor substrate between the cell strings. A common source line(CSL) is connected to the shield. The shield is low formed than the surface of the semiconductor substrate. The shield is formed into the conductive layer.
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