发明名称 FLOATING BODY CELL AND MANUFACTURING METHOD THEREOF
摘要 PURPOSE: A floating body cell and a manufacturing method thereof are provided to improve a punch property of a memory cell by sufficiently maintaining the thickness of the floating body. CONSTITUTION: A gate oxidation film and a gate are successively formed on a silicon substrate. A first spacer(130) is formed on the outer sidewall of the gate. A trench is formed by removing a part of the silicon substrate exposed between gates. A second spacer is formed on the outer sidewall of the gate and the inner sidewall of the trench. A part of the silicon substrate of a lower trench exposed between the second spacer is oxidized and a cell isolation film is formed. The second spacer is selectively removed. A poly-silicon(170) is filled between the gates and inside the trench.
申请公布号 KR20100059605(A) 申请公布日期 2010.06.04
申请号 KR20080118445 申请日期 2008.11.26
申请人 HYNIX SEMICONDUCTOR INC. 发明人 JANG, TAE SU
分类号 H01L21/8242;H01L27/108;H01L29/788 主分类号 H01L21/8242
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