发明名称 NON-VOLATILE MEMORY DEVICE
摘要 PURPOSE: A non-volatile memory device is provided to implement high speed writing and reading data by executing reading and programming operation according to the sequence and frequency of writing. CONSTITUTION: A plurality of data memory cell array(102) are divided into two groups and a plurality of data is assigned to groups to store it respectively. A memory cell array(106) stores a write sequence including information that which of two groups is firstly recorded with a data. A memory cell array(104) stores the number of writing data in a multiple memory cell. A data processing circuit performs a reading operation and a program operation. A control circuit(120) controls the operation of the data processing circuit.
申请公布号 KR20100059669(A) 申请公布日期 2010.06.04
申请号 KR20090076844 申请日期 2009.08.19
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 SHUNICHI TOYAMA
分类号 G11C16/34;G11C16/10;G11C16/30 主分类号 G11C16/34
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