发明名称 |
NON-VOLATILE MEMORY DEVICE |
摘要 |
PURPOSE: A non-volatile memory device is provided to implement high speed writing and reading data by executing reading and programming operation according to the sequence and frequency of writing. CONSTITUTION: A plurality of data memory cell array(102) are divided into two groups and a plurality of data is assigned to groups to store it respectively. A memory cell array(106) stores a write sequence including information that which of two groups is firstly recorded with a data. A memory cell array(104) stores the number of writing data in a multiple memory cell. A data processing circuit performs a reading operation and a program operation. A control circuit(120) controls the operation of the data processing circuit. |
申请公布号 |
KR20100059669(A) |
申请公布日期 |
2010.06.04 |
申请号 |
KR20090076844 |
申请日期 |
2009.08.19 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
SHUNICHI TOYAMA |
分类号 |
G11C16/34;G11C16/10;G11C16/30 |
主分类号 |
G11C16/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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