| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To manufacture a semiconductor device including a penetrating electrode having a high aspect ratio with a low-temperature process. <P>SOLUTION: A first electrode 3 and a second electrode 6 that are arranged on the front and rear surface sides of a semiconductor substrate 1, respectively, are electrically connected to each other by a conductive material 7 filled in a connection hole 4 and an extension portion 6a of the second electrode 6 extending into the connection hole 4. Even though the connection hole 4 has a high aspect ratio, film formation with the low-temperature process is allowed by using the conductive material 7, instead of forming the second electrode 6 up to a bottom portion of the connection hole 4. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
