| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem regarding on and off currents of a thin-film transistor, and to provide a thin-film transistor that is operated at high speed. SOLUTION: The thin-film transistor includes: a gate electrode; a gate insulating layer formed on the gate electrode; a microcrystalline semiconductor layer that abuts on the gate insulating layer and a pair of buffer layers and has an uneven surface at the side of the pair of buffer layers; an impurity semiconductor layer functioning as source and drain regions formed on the pair of buffer layers; and wiring. COPYRIGHT: (C)2010,JPO&INPIT |
