发明名称 THIN-FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME
摘要 Provided is a thin-film transistor (TFT) substrate. The TFT substrate includes: an insulating substrate; a semiconductor pattern which is formed on the insulating substrate, the semiconductor pattern having a top surface and a bottom surface; a source electrode and a drain electrode which are disposed on the top and bottom surfaces of the semiconductor pattern, respectively; a gate electrode which is disposed alongside the semiconductor pattern with a gate insulating film interposed therebetween; a data line which is connected to the source electrode and extends in a first direction; a gate line which is connected to the gate electrode and extends in a second direction; and a pixel electrode which is connected to the drain electrode and is formed in a pixel region.
申请公布号 US2010133539(A1) 申请公布日期 2010.06.03
申请号 US20090571345 申请日期 2009.09.30
申请人 KANG HOON;LEE YUN-SEOK;KIM JAE-SUNG;JUNG YANG-HO;CHO YOUNG-JE;MAENG CHEON-JAE;LEE WOO-GEUN 发明人 KANG HOON;LEE YUN-SEOK;KIM JAE-SUNG;JUNG YANG-HO;CHO YOUNG-JE;MAENG CHEON-JAE;LEE WOO-GEUN
分类号 H01L29/40;H01L21/77 主分类号 H01L29/40
代理机构 代理人
主权项
地址