| 摘要 |
In sophisticated semiconductor devices, stress-inducing materials may be provided above the basic transistor devices without any etch control or etch stop materials, thereby enabling an efficient de-escalation of the surface topography, in particular above field regions including closely spaced polysilicon lines. Furthermore, an additional stress-inducing material may be provided on the basis of the superior surface topography, thereby providing a highly efficient strain-inducing mechanism in performance-driven transistor elements.
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