| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin-film transistor having an indium oxide and a tin oxide-based semiconductor film, wherein only a metal thin film on the semiconductor film can be selectively etched. SOLUTION: The thin-film has, as a channel layer, the amorphous oxide semiconductor film containing the indium oxide, tin oxide, and plus trivalent lanthanide-based metal oxide, and contents of an indium element (In), a tin element (Sn), and plus trivalent lanthanide-based element (Ln) in the amorphous oxide semiconductor film meet conditions as follows: In/(In+Sn+Ln)=0.2 to 0.8, Sn/(In+Sn+Ln)=0.1 to 0.4, and Ln/(In+Sn+Ln)=0.1 to 0.4. COPYRIGHT: (C)2010,JPO&INPIT |
