| 摘要 |
PURPOSE: An image sensor and a manufacturing method thereof are provided to enhance the light receiving efficiency of a photodiode region by forming a metal line in a region adjacent to the photodiode region. CONSTITUTION: A plurality of photodiodes and a transistor are formed on a substrate(100). At least one insulating layer is formed on the upper side of the substrate. A metal line is formed in the upper side substrate and on the insulating layer. The metal line forms a transmission path for the light moving to the photodiode region. A micro lens(170) is formed on the upper side of the metal line. The metal line comprises metal lines(131, 132, 133) and via metals(141, 142).
|
