| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device reducing stress generated when there is a density difference in the arrangement of bumps, and also to provide a method of manufacturing the semiconductor device. SOLUTION: The semiconductor device is provided with: a wiring board including an electrode terminal group; and a semiconductor chip including a bump formation surface 7 where a group of bumps 3 is formed and being mounted on the wiring board so that the group of the bumps 3 faces the electrode terminal group. The bump formation surface 7 is provided with: a first region 9 where the area density of a region having the bumps 3 arranged therein is a first density; a second region 10 where the area density of a region having the bumps 3 arranged therein is a second density lower than the first density; and a third region 11 provided in a border portion between the first region 9 and the second region 10. In the third region 11, the area density of a region having the bumps 3 arranged therein is higher than the second density and lower than the first density. COPYRIGHT: (C)2010,JPO&INPIT
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