| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device which suppresses diffusion of an out gas discharged from a resin. <P>SOLUTION: The semiconductor device 100 has a first resin layer 10 on a semiconductor substrate 1, and also has an inductor L and a second resin layer 20 covering the inductor L, provided on the first resin layer 10. The first resin layer 10 has a projection portion 11 enclosing the second resin layer 20 in plan view, and at least a part of the projection portion 11 is covered with a metallic film 30. <P>COPYRIGHT: (C)2010,JPO&INPIT |
