发明名称 |
METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE |
摘要 |
An embodiment of the invention provides a method for forming a semiconductor device comprising providing a substrate with a pad layer formed thereon. The pad layer and the substrate are patterned to form a plurality of trenches. A trench top insulating layer is formed in each trench. Wherein the trench top insulating layer protrudes from the substrate and has an extension portion extending to the pad layer. The pad layer and the substrate are etched by using the trench top insulating layers and the extension portions as a mask to form a recess in the substrate. And a recess gate is formed in the recess.
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申请公布号 |
US2010133608(A1) |
申请公布日期 |
2010.06.03 |
申请号 |
US20100698747 |
申请日期 |
2010.02.02 |
申请人 |
NANYA TECHNOLOGY CORPORATION |
发明人 |
HO JAR-MING;WANG MAO-YING |
分类号 |
H01L29/78 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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