摘要 |
In a semiconductor module having the structure in which a bump electrode provided on a wiring layer is connected to a device electrode provided on a semiconductor device, connection reliability between the bump electrode and the device electrode is improved. An insulating resin layer is provided between the semiconductor device and the wiring layer. The bump electrode, formed integrally with the wiring layer and projected from the wiring layer toward the insulating resin layer, is electrically connected to the device electrode provided on the semiconductor device. Part of the height of the wiring layer on the end side in a bump connection area is lower than that of the wiring in a wiring area extending toward the side opposite to the end side.
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