发明名称 |
RADIATION-EMITTING SEMICONDUCTOR CHIP |
摘要 |
The invention relates to a radiation-emitting semiconductor chip (1), which has a carrier (5) and a semiconductor body (2) having a semiconductor layer sequence. An emission region (23) and a protective diode region (24) are produced in the semiconductor chip (2) having the semiconductor layer sequence. The semiconductor layer sequence has an active region (20) provided for generating radiation, which is disposed between a first semiconductor layer (21) and a second semiconductor layer (22). The first semiconductor layer (21) is arranged on the side of the active region (20) that faces away from the carrier (5). The emission region (23) has a recess (25), which extends through the active region. In the emission region (23), the first semiconductor layer (21) is connected to a first connecting layer (31) in an electrically conductive manner, wherein the first connecting layer extends in the recess (25) from the first semiconductor layer (21) in the direction of the carrier (5). In the protective diode region (24), the first connecting layer is connected to the second semiconductor layer (22) in an electrically conductive manner. Furthermore, a method for producing a radiation-emitting semiconductor chip is provided. |
申请公布号 |
WO2010060404(A1) |
申请公布日期 |
2010.06.03 |
申请号 |
WO2009DE01524 |
申请日期 |
2009.10.29 |
申请人 |
OSRAM OPTO SEMICONDUCTORS GMBH;MOOSBURGER, JUERGEN;VON MALM, NORWIN;RODE, PATRICK;HOEPPEL, LUTZ;ENGL, KARL |
发明人 |
MOOSBURGER, JUERGEN;VON MALM, NORWIN;RODE, PATRICK;HOEPPEL, LUTZ;ENGL, KARL |
分类号 |
H01L25/16;H01L27/15;H01L33/08;H01L33/38 |
主分类号 |
H01L25/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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