发明名称 |
METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR SUBSTRATE, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND REACTION APPARATUS |
摘要 |
<p>Disclosed is a method wherein a semiconductor substrate is produced by heat-treating a base substrate that comprises a portion to be heat-treated, said portion being subjected to a heat treatment. The method for producing a semiconductor substrate comprises: a step wherein a portion to be heated is formed on the base substrate, said portion to be heated absorbing electromagnetic waves and generating heat, thereby selectively heating the portion to be heat-treated; a step wherein the base substrate is irradiated with electromagnetic waves; and a step wherein the lattice defect density in the portion to be heat-treated is decreased by the heat that is generated when the portion to be heated absorbs electromagnetic waves.</p> |
申请公布号 |
WO2010061619(A1) |
申请公布日期 |
2010.06.03 |
申请号 |
WO2009JP06411 |
申请日期 |
2009.11.26 |
申请人 |
SUMITOMO CHEMICAL COMPANY, LIMITED;TAKADA, TOMOYUKI;HATA, MASAHIKO;YAMADA, HISASHI |
发明人 |
TAKADA, TOMOYUKI;HATA, MASAHIKO;YAMADA, HISASHI |
分类号 |
H01L21/26;H01L21/20;H01L21/205;H01L21/265;H01L21/268 |
主分类号 |
H01L21/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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