发明名称 METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR SUBSTRATE, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND REACTION APPARATUS
摘要 <p>Disclosed is a method wherein a semiconductor substrate is produced by heat-treating a base substrate that comprises a portion to be heat-treated, said portion being subjected to a heat treatment.  The method for producing a semiconductor substrate comprises: a step wherein a portion to be heated is formed on the base substrate, said portion to be heated absorbing electromagnetic waves and generating heat, thereby selectively heating the portion to be heat-treated; a step wherein the base substrate is irradiated with electromagnetic waves; and a step wherein the lattice defect density in the portion to be heat-treated is decreased by the heat that is generated when the portion to be heated absorbs electromagnetic waves.</p>
申请公布号 WO2010061619(A1) 申请公布日期 2010.06.03
申请号 WO2009JP06411 申请日期 2009.11.26
申请人 SUMITOMO CHEMICAL COMPANY, LIMITED;TAKADA, TOMOYUKI;HATA, MASAHIKO;YAMADA, HISASHI 发明人 TAKADA, TOMOYUKI;HATA, MASAHIKO;YAMADA, HISASHI
分类号 H01L21/26;H01L21/20;H01L21/205;H01L21/265;H01L21/268 主分类号 H01L21/26
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