| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device in which normal electric continuity between wiring layers is secured. SOLUTION: The semiconductor device includes at least two wiring layers on a substrate or in a surface layer of the substrate, and also includes a silicon carbide layer between the lower-layer wiring layer and upper-layer wiring layer of the two wiring layers when the lower-layer wiring layer is made of silicon. COPYRIGHT: (C)2010,JPO&INPIT |
