| 摘要 |
A semiconductor memory device, having a 6F2 open bit line structure, connects each bit line of a bit line pair to a respective bit line of a neighboring bit line pair for a precharge operation so that a layout size of the semiconductor memory device decreases. Plural first precharge units each precharge one bit line of a first bit line pair and one bit line of a second bit line pair in response to a bit line equalizing signal. Plural sense amplifiers each sense a data bit supplied to a respective one of the first and second bit line pairs and amplify sensed data.
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