| 摘要 |
Provided are a ZnO-based substrate having a surface suitable for crystal growth, and a method of manufacturing the ZnO-based substrate. The ZnO-based substrate is made in a way that almost no hydroxide groups exist on a crystal growth-side surface of a MgxZn1-xO substrate (0≦̸x<1). To this end, as a method of treating the substrate, a final treatment to be applied on the crystal growth-side surface of the MgxZn1-xO substrate (0≦̸x<1) is acidic wet etching at pH 3 or lower. Thereby, it is possible to prevent production of a hydroxide of Zn, and to reduce the density of crystal defects in a thin film formed on the ZnO-based substrate.
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