METHODS FOR FORMING SILICON NITRIDE BASED FILM OR SILICON CARBON BASED FILM
摘要
A method for depositing a silicon nitride based dielectric layer is provided. The method includes introducing a silicon precursor and a radical nitrogen precursor to a deposition chamber. The silicon precursor has a N-Si-H bond, N-Si-Si bond and/or Si-Si-H bond. The radical nitrogen precursor is substantially free from included oxygen. The radical nitrogen precursor is generated outside the deposition chamber. The silicon precursor and the radical nitrogen precursor interact to form the silicon nitride based dielectric layer.
申请公布号
WO2010039363(A3)
申请公布日期
2010.06.03
申请号
WO2009US55073
申请日期
2009.08.26
申请人
APPLIED MATERIALS, INC.;MALLICK, ABHIJIT, BASU;NEMANI, SRINIVAS, D.