发明名称 |
ELECTRODEPOSITION OF COPPER IN MICROELECTRONICS WITH DIPYRIDYL-BASED LEVELERS |
摘要 |
A method for metallizing a via feature in a semiconductor integrated circuit device substrate, wherein the semiconductor integrated circuit device substrate comprises a front surface, a back surface, and the via feature and wherein the via feature comprises an opening in the front surface of the substrate, a sidewall extending from the front surface of the substrate inward, and a bottom. The method comprises contacting the semiconductor integrated circuit device substrate with an electrolytic copper deposition chemistry comprising (a) a source of copper ions and (b) a leveler compound, wherein the leveler compound is a reaction product of a dipyridyl compound and an alkylating agent; and supplying electrical current to the electrolytic deposition chemistry to deposit copper metal onto the bottom and sidewall of the via feature, thereby yielding a copper filled via feature. |
申请公布号 |
WO2010062822(A2) |
申请公布日期 |
2010.06.03 |
申请号 |
WO2009US65053 |
申请日期 |
2009.11.19 |
申请人 |
ENTHONE INC.;PANECCASIO, VINCENT;LIN, XUAN;HURTUBISE, RICHARD;CHEN, QINGYUN |
发明人 |
PANECCASIO, VINCENT;LIN, XUAN;HURTUBISE, RICHARD;CHEN, QINGYUN |
分类号 |
C25D3/38;C25D7/12;H01L21/288 |
主分类号 |
C25D3/38 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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