TRANSISTOR AND METHOD FOR MANUFACTURING SAME

摘要

Disclosed is a field effect transistor having an active layer composed of an oxide semiconductor, wherein diffusion of an electrode material into the active layer can be suppressed, the electrical resistance of the electrode material can be decreased, and damage to the active layer can be reduced.  Also disclosed is a method for manufacturing the field effect transistor. A transistor according to one embodiment of the invention comprises an active layer composed of an oxide semiconductor, a first electrode layer composed of a Ti material or an Mo material, and a second electrode layer composed of a material having a lower resistivity than the material of the first electrode layer. By having a configuration wherein the first electrode layer, which is suppressed in diffusion into the active layer composed of an oxide semiconductor, and the second electrode layer having a low resistivity are laminated, there can be obtained an FET which exhibits good FET characteristics at the interface between the active layer and the electrode layer, while having an electrode with a low electrical resistance.