| 摘要 |
PROBLEM TO BE SOLVED: To provide a high-performance semiconductor device which is less likely to have concentration of electric fields, can suppress a leakage current, can reduce an ineffective region in a PN junction region, can ensure a sufficient area for a Schottky junction region, and can be efficiently and easily manufactured. SOLUTION: In one face of an SiC semiconductor substrate 1 having a first conductivity type, a PN junction region 7a and a Schottky junction region 7b are formed. In the PN junction region 7a, a convex portion 2a having a trapezoidal cross-sectional shape, which includes a second conductivity type layer 2 formed on the semiconductor substrate 1, and a contact layer 3 formed on the second conductivity type layer 2 of the convex portion 2a in ohmic contact therewith are provided. A Schottky electrode 4 is formed continuous with the PN junction region 7a and the Schottky junction region 7b while covering the side face of the convex portion 2a and the contact layer 3. COPYRIGHT: (C)2010,JPO&INPIT |
