发明名称 MODEL PARAMETER EXTRACTOR AND MODEL PARAMETER EXTRACTION PROGRAM FOR SEMICONDUCTOR DEVICE MODEL
摘要 PROBLEM TO BE SOLVED: To perform model parameter extraction so as to eliminate characteristic deflection of a model. SOLUTION: A model parameter extractor (1) includes: a binning processing unit (18) for performing binning processing; and a model parameter extraction unit (11) for extracting a model parameter for each of multiple bins formed through binning processing. The model parameter extraction unit (11) extracts a first model parameter (P2A) corresponding to a first end (A) of a target bin. A candidate (P2B') for a second model parameter (P2B) corresponding to a second end (B) of the target bin is set based on the first model parameter (P2A). A start-point-side gradient and an end-point-side gradient of a finite curve representing an electrical characteristic of a semiconductor device are specified based on the first model parameter (P2A) and the candidate (P2B') for the second model parameter. Then, the second model parameter (P2B) is extracted based on a result of comparison between the gradients. COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010122946(A) 申请公布日期 2010.06.03
申请号 JP20080296576 申请日期 2008.11.20
申请人 NEC ELECTRONICS CORP 发明人 HATANAKA YUKICHI
分类号 G06F17/50;H01L21/82 主分类号 G06F17/50
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