发明名称 ION IMPLANTATION DEVICE
摘要 PROBLEM TO BE SOLVED: To provide an ion implantation device setting the central position of an ion beam incident on a target to a desired position while maintaining the incident angle of the ion beam incident on the target at a desired angle so as not to greatly change a deflection central position even in acceleration/deceleration, in particular, in deceleration of the ion beam. SOLUTION: In the ion implantation device with an electrostatic accelerating tube 3 for accelerating/decelerating and deflecting the ion beam IB to be incident on the target T, a deflection electrode 5 constituting a part of the electrostatic accelerating tube 3 includes a first deflection electrode 51 and a second deflection electrode 52 which are disposed with the ion beam IB interposed and set at different potentials. The second deflection electrode 52 is disposed on a side toward which the ion beam IB is deflected and includes an upstream electrode 521 disposed upstream and a downstream electrode 522 disposed apart from the upstream electrode. The upstream and downstream electrodes are configured such that their potentials can be set independently. COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010123547(A) 申请公布日期 2010.06.03
申请号 JP20080298794 申请日期 2008.11.21
申请人 NISSIN ION EQUIPMENT CO LTD 发明人 IAI TETSUYA;IKEJIRI TADASHI;YAMASHITA TAKATOSHI
分类号 H01J37/317;H01J37/147;H01L21/265 主分类号 H01J37/317
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