| 发明名称 |
Semiconductor devices having increased sensing margin |
| 摘要 |
One transistor (1-T) dynamic random access memories (DRAM) having improved sensing margins that are relatively independent of the amount of carriers stored in a body region thereof.
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| 申请公布号 |
US2010133600(A1) |
申请公布日期 |
2010.06.03 |
| 申请号 |
US20090591686 |
申请日期 |
2009.11.30 |
| 申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM WON-JOO;CHOI SANG-MOO;LEE TAE-HEE;PARK YOON-DONG;CHA DAE-KIL |
| 分类号 |
H01L29/788;H01L21/28 |
主分类号 |
H01L29/788 |
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