摘要 |
A method is disclosed for processing the cleaved surface of a silicon-on-insulator structure. The silicon-on-insulator structures comprises a handle wafer, a silicon layer, and a dielectric layer between the handle wafer and the silicon layer. The silicon layer has a cleaved surface defining an outer surface of the structure. The methods disclosed include an etching process to reduce the time and cost required to process the silicon-on-insulator structure to remove the surface damage and defects formed when a portion of the donor wafer is separated along a cleave plane from the silicon-on-insulator structure. The method includes, annealing the structure, etching the cleaved surface, and performing a non-contact smoothing process on the cleaved surface. |
申请人 |
MEMC ELECTRONIC MATERIALS, INC.;RIES, MICHAEL J.;STANDLEY, ROBERT W.;LIBBERT, JEFFREY L.;JONES, ANDREW M.;WILSON, GREGORY M. |
发明人 |
RIES, MICHAEL J.;STANDLEY, ROBERT W.;LIBBERT, JEFFREY L.;JONES, ANDREW M.;WILSON, GREGORY M. |