| 摘要 |
<p>PURPOSE: A semiconductor device and a manufacturing method thereof are provided to reduce an electric current path in order to decrease on resistance by forming a shallow-trench-isolation with a round end part in a silicon surface. CONSTITUTION: A well region(200) is formed by injecting impurities between element isolation layers. A drift region(240) is formed on upper side of the well region. A part of the drift region is oxidized to form an oxide layer. A gate pattern(290) is formed by overlapping with one side of the drift region. An oxide region(280) is closely formed in the gate pattern.</p> |
