| 摘要 |
<p>PURPOSE: A method for manufacturing a flash memory device is provided to reduce manufacturing costs by decreasing the number of ion injection operations for forming the junction of a cell. CONSTITUTION: A trench is formed on a semiconductor substrate. A gate poly is formed on the semiconductor substrate. A first photo-resistant pattern(140) is formed on the semiconductor substrate. An ion injection operation using the first photo-resistant pattern and the gate poly as a mask is performed. A second photo-resistant pattern(160) is formed in order to form recess common source(RCS) regions(171,172) which correspond to the trench. The ion injection operation is performed in correspondence to the RCS regions.</p> |
