发明名称 |
RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING BRANCHED POLYHYDROXYSTYRENE |
摘要 |
[PROBLEMS] To provide a resist underlayer film which does not cause intermixing with a photoresist formed thereon by coating and which is soluble in an alkaline developer and can be developed and removed simultaneously with the photoresist and a resist underlayer film forming composition for forming the resist underlayer film. [MEANS FOR SOLVING PROBLEMS] A resist under layer film forming composition to be used in the lithographic process in the production of semiconductor devices, which comprises a branched polyhydroxystyrene wherein a repeating ethylene unit of a polyhydroxystyrene molecule is bonded to a benzene ring of another polyhydroxystyrene molecule, a compound having at least two vinyl ether groups, and a photoacid generator.
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申请公布号 |
KR20100058574(A) |
申请公布日期 |
2010.06.03 |
申请号 |
KR20107006085 |
申请日期 |
2008.09.18 |
申请人 |
NISSAN CHEMICAL INDUSTRIES, LTD. |
发明人 |
HAMADA TAKAHIRO;FUJITANI NORIAKI |
分类号 |
G03F7/11 |
主分类号 |
G03F7/11 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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