发明名称 |
DRY ETCHING APPARATUS AND DRY ETCHING METHOD |
摘要 |
A dry etching apparatus having excellent in-plane uniformity and a high etching rate and a dry etching method are provided. A dry etching apparatus includes a vacuum chamber having an upper plasma generation chamber and a lower substrate processing chamber; a magnetic field coil disposed outside a sidewall of the plasma generation chamber; an antenna coil disposed between the magnetic field coil and the outside of the sidewall and connected to a high-frequency power source; and means for introducing an etching gas disposed on top of the plasma generation chamber, wherein the sidewall is formed of a material having a relative dielectric constant of 4 or more.
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申请公布号 |
US2010133235(A1) |
申请公布日期 |
2010.06.03 |
申请号 |
US20080597637 |
申请日期 |
2008.05.08 |
申请人 |
MORIKAWA YASUHIRO;SUU KOUKOU;HAYASHI TOSHIO |
发明人 |
MORIKAWA YASUHIRO;SUU KOUKOU;HAYASHI TOSHIO |
分类号 |
B44C1/22;C23F1/08 |
主分类号 |
B44C1/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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