| 摘要 |
A junction field effect transistor includes a channel region, a gate region coupled to the channel region, a well tap region coupled to the gate region and the channel region, and a well region coupled to the well tap region and the channel region. A double gate operation is achieved by this structure as a voltage applied to the gate region is also applied to the well region through the well tap region in order to open the channel from both the gate region and the well region.
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