发明名称 FILM FORMING METHOD BY SPUTTERING AND SPUTTERING APPARATUS THEREOF
摘要 To provide a sputtering apparatus that enables oblique film forming by arranging a target and a substrate so as to allow sputtered particles emitted from the target to obliquely enter the substrate selectively, and can form a magnetic film having high uniaxial magnetic anisotropy uniformly and compactly. A sputtering apparatus includes a cathode having a sputtering target supporting surface, the cathode being provided with a rotation axis about which the sputtering target supporting surface rotates, and a stage having a substrate supporting surface, the stage being provided with a rotation axis about which the substrate supporting surface rotates, and the sputtering apparatus is constituted such that the sputtering target supporting surface and the substrate supporting surface face to each other, and are rotatable independently about respective rotation axes. Further, it is constituted such that a shield plate is arranged between the sputtering target supporting surface and the substrate supporting surface, and is rotatable independently from the cathode and the stage.
申请公布号 US2010133090(A1) 申请公布日期 2010.06.03
申请号 US20100684359 申请日期 2010.01.08
申请人 CANON ANELVA CORPORATION 发明人 ENDO TETSUYA;ABARRA EINSTEIN NOEL
分类号 C23C14/36 主分类号 C23C14/36
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